PART |
Description |
Maker |
TH50VSF4682AASB TH50VSF4683AASB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
AM42BDS640AG AM42BDS640AGBC8IT AM42BDS640AGBC8IS A |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
AMD[Advanced Micro Devices] SPANSION[SPANSION]
|
AM41DL6408G AM41DL6408G70IS AM41DL6408G70IT AM41DL |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
S75NS128NDEZFWNK0 S75NS128NDEZFWNK3 S75NS128ND0ZFW |
1.8 Volt-only, Stacked Multi-Chip Product (MCP) x16 MirrorBit Flash Memory and DRAM
|
SPANSION[SPANSION]
|
M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
M36P0R9060E0 |
Multi-Chip Package
|
ST Microelectronics
|
M36LLR8760B1 M36LLR8760M1 M36LLR8760TT M36LLR8760D |
256 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
意法半导 STMicroelectronics ST Microelectronics
|
KAB04D100M-TNGP KAB01D100M KAB01D100M-TLGP KAB01D1 |
Multi-Chip Package MEMORY
|
SAMSUNG[Samsung semiconductor]
|
WED3C755E8M300BC WED3C755E8M350BC WED3C755E8M350BI |
RISC MICROPROCESSOR MULTI-CHIP PACKAGE
|
WEDC[White Electronic Designs Corporation]
|